Large gate swing and high threshold voltage enhancement-mode AlGaN/GaN HEMTs using low energy fluorine ion implantation in GaN layer

C. H. Wu, P. C. Han, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Enhancement-mode (E-mode) AlGaN/GaN HEMTs with large gate swing and high threshold voltage is demonstrated in this work. The E-mode GaN HEMTs were fabricated by low energy fluorine ion implantation technique. Low energy fluorine ion implantation can provide higher fluorine ion concentration in the AlGaN layer and modulate the fluorine ion distribution in the GaN layer. The ion distribution can be also calculated by SRIM simulation. (The Stopping and Range of Ions in Matter) Without using gate insulator, the enhancement-mode GaN HEMT shows high threshold voltage of 2.5 V, with a current density of 200 mA/mm at a gate bias of 5.5 V. To confirm the implantation damages were removed, thermal stability test was performed in this work. After annealing at 400 °C for 10 minutes, the implanted devices showed no obvious threshold voltage shift.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 16
EditorsS. Jang, K. C. Mishra, K. Shenai, C. O'Dwyer, G. W. Hunter, F. Ren
PublisherElectrochemical Society Inc.
Pages201-204
Number of pages4
Edition1
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2015
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States
Duration: 24 May 201528 May 2015

Publication series

NameECS Transactions
Number1
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
CountryUnited States
CityChicago
Period24/05/1528/05/15

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    Wu, C. H., Han, P. C., & Chang, E. Y. (2015). Large gate swing and high threshold voltage enhancement-mode AlGaN/GaN HEMTs using low energy fluorine ion implantation in GaN layer. In S. Jang, K. C. Mishra, K. Shenai, C. O'Dwyer, G. W. Hunter, & F. Ren (Eds.), Wide Bandgap Semiconductor Materials and Devices 16 (1 ed., pp. 201-204). (ECS Transactions; Vol. 66, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0201ecst