The fabrication of large-area light-emitting gallium nitride (GaN) based light emitting diodes (LED) on conducting copper substrates using metal bonding and LLO techniques was investigated. The GaN-based LED wafer structure was grown by metalorganic chemical vapor deposition (MOCVD) on a (1000) sapphire substrates. The LED were transferred on to Cu substrate and formed an n-GaN/ multi-quantum wells (MQW)/p-GaN/nickel (Ni)/gold (Au)/Ni/copper (Cu), p-side down, structure. No peeling on cracks were observed on the LED film despite the large different thermal expansion coefficient of GaN and Cu.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - 1 Dec 2004|
|Event||2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico|
Duration: 7 Nov 2004 → 11 Nov 2004