Large emitting area GaN based light emitting diode fabricated on conducting copper substrates

Jung Tang Chu*, Wen Deng Liang, Chen Fu Chu, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The fabrication of large-area light-emitting gallium nitride (GaN) based light emitting diodes (LED) on conducting copper substrates using metal bonding and LLO techniques was investigated. The GaN-based LED wafer structure was grown by metalorganic chemical vapor deposition (MOCVD) on a (1000) sapphire substrates. The LED were transferred on to Cu substrate and formed an n-GaN/ multi-quantum wells (MQW)/p-GaN/nickel (Ni)/gold (Au)/Ni/copper (Cu), p-side down, structure. No peeling on cracks were observed on the LED film despite the large different thermal expansion coefficient of GaN and Cu.

Original languageEnglish
Pages (from-to)282-283
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
DOIs
StatePublished - 1 Dec 2004
Event2004 IEEE LEOS Annual Meeting Conference Proceedings, LEOS 2004 - Rio Grande, Puerto Rico
Duration: 7 Nov 200411 Nov 2004

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