Large-area synthesis of highly crystalline WSe2 monolayers and device applications

Jing Kai Huang, Jiang Pu, Chang Lung Hsu, Ming Hui Chiu, Zhen Yu Juang, Yung Huang Chang, Wen-Hao Chang, Yoshihiro Iwasa, Taishi Takenobu*, Lain Jong Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

631 Scopus citations

Abstract

The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO 3, where large-size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm2/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations.

Original languageEnglish
Pages (from-to)923-930
Number of pages8
JournalACS Nano
Volume8
Issue number1
DOIs
StatePublished - 28 Jan 2014

Keywords

  • inverters
  • layered materials
  • transistors
  • transition metal dichalcogenides
  • tungsten diselenides
  • two-dimensional materials

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