Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode

Kyooho Jung, Che Yu Liu, J. D. Kim, Wonsik Choi, Weidong Zhou, Hao-Chung Kuo, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Epitaxial growth of aligned MoS 2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS 2 /p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.

Original languageEnglish
Title of host publication2016 IEEE Photonics Conference, IPC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages657-658
Number of pages2
ISBN (Electronic)9781509019069
DOIs
StatePublished - 23 Jan 2017
Event29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States
Duration: 2 Oct 20166 Oct 2016

Publication series

Name2016 IEEE Photonics Conference, IPC 2016

Conference

Conference29th IEEE Photonics Conference, IPC 2016
CountryUnited States
CityWaikoloa
Period2/10/166/10/16

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    Jung, K., Liu, C. Y., Kim, J. D., Choi, W., Zhou, W., Kuo, H-C., & Li, X. (2017). Large area MoS 2 van der Waals epitaxy on III-Ns and the epitaxial formation of a n-MoS 2 /p-InGaN diode. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 657-658). [7831271] (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831271