Large-area and bright pulsed electroluminescence in monolayer semiconductors

Der-Hsien Lien, Matin Amani, Sujay B. Desai, Geun Ho Ahn, Kevin Han, Jr-Hau He, Joel W. Ager, Ming C. Wu, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electro-luminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Original languageEnglish
Article number1229
Number of pages7
JournalNature Communications
Volume9
DOIs
StatePublished - 26 Mar 2018

Keywords

  • LIGHT-EMITTING-DIODES
  • ENERGY-CONVERSION
  • HIGH-PERFORMANCE
  • LAYER MOS2
  • PHOTOLUMINESCENCE
  • EMISSION
  • TRANSISTORS
  • FILMS

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