Lanthanum oxides for gate insulator application

Kuniyuki Kakushima*, Parhat Ahmet, Nobuyuki Sugii, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Feasibility study of lanthanum oxides (La2O3) for gate insulator application is presented. Electrical measurements of MOS capacitors with various annealing conditions are performed, where low temperature annealing in nitrogen seems to be the best, which showed electron effective mobility of 261 cm2/Vs by fabricating La2O 3 gated MOSFET. Post-metallization annealing with Al gate metal showed further high effective mobility of 319 cm2/Vs, where reaction between Al and La2O3 were observed, and EOT value increased from 1.29 to 2.33 nm. Novel rare earth oxide stacks are also presented to suppress the EOT growth even at high temperature annealing processing. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages115-127
Number of pages13
Edition1
StatePublished - 2006
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 7 May 200612 May 2006

Publication series

NameECS Transactions
Number1
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period7/05/0612/05/06

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  • Cite this

    Kakushima, K., Ahmet, P., Sugii, N., Tsutsui, K., Hattori, T., & Iwai, H. (2006). Lanthanum oxides for gate insulator application. In Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing (1 ed., pp. 115-127). (ECS Transactions; Vol. 2, No. 1).