Lanthanum oxide for gate dielectric insulator

K. Kakushima*, K. Tsutsui, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2 gate oxide for CMOS integrated circuits has been reported. It is found that La2O3 after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant The conduction mechanism of La2O3 gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La2O3 gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages161-166
Number of pages6
ISBN (Print)0780393392, 9780780393394
DOIs
StatePublished - 2005
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 19 Dec 200521 Dec 2005

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period19/12/0521/12/05

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    Kakushima, K., Tsutsui, K., Hattori, T., & Iwai, H. (2005). Lanthanum oxide for gate dielectric insulator. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 161-166). [1635231] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635231