Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Sun Jung Kim, Byung Jin Cho*, Ming Fu Li, Chunxiang Zhu, Albert Chin, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

21 Scopus citations


A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/μm2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.

Original languageEnglish
Pages (from-to)442-444
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 1 Jul 2003


  • Capacitance density
  • Co-sputtering
  • HfO
  • Lanthanide
  • Metal-insulator-metal (MIM) capacitor
  • Voltage coefficient of capacitor (VCC)

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