We proposed two lanthanide-oxide mixed TiO 2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO 2 -LaAlO (TLAO) and TiO 2 -LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/μ m 2 with a low leakage current of 1.4× 10 -7 A/ cm 2 was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO 2 dielectrics with the introduction of LaAlO 3 and LaYO might be promising for MIM capacitors.