Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

D. S. Yu*, Albert Chin, C. H. Wu, M. F. Li, C. Zhu, S. J. Wang, W. J. Yoo, B. F. Hung, S. P. McAlister

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages634-637
Number of pages4
DOIs
StatePublished - 1 Dec 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 5 Dec 20057 Dec 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period5/12/057/12/05

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    Yu, D. S., Chin, A., Wu, C. H., Li, M. F., Zhu, C., Wang, S. J., Yoo, W. J., Hung, B. F., & McAlister, S. P. (2005). Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 634-637). [1609430] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005). https://doi.org/10.1109/IEDM.2005.1609430