Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface Characteristics

Tomoyuki Suzuki, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The electrical characteristics of SiC Schottky barrier diodes with laminated Mo/C electrodes having a Mo and C atom composition ratio of 2:1 have been investigated. High thermal stability against annealing up to a temperature of 1050 °C has been found as a diode characteristic. The almost identical values of Schottky barrier height for the electrons (ΦBn) obtained in several measurements with the ideality factors of below 1.10 indicate the formation of an ideal Schottky contact with 4H-SiC substrates.

Original languageEnglish
Article number7422721
Pages (from-to)618-620
Number of pages3
JournalIEEE Electron Device Letters
Volume37
Issue number5
DOIs
StatePublished - May 2016

Keywords

  • breakdown voltage
  • high-temperature annealing
  • ideality factor
  • interface reaction
  • Mo carbide
  • reverse leakage current
  • Schottky barrier diode
  • silicon carbide

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