La 2O 3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La 2O 3 stacks for improved metal-oxide-semiconductor characteristics

Takuya Suzuki, Miyuki Kouda, Parhat Ahmet, Hiroshi Iwai, Kuniyuki Kakushima, Tetsuji Yasuda*

*Corresponding author for this work

Research output: Contribution to journalArticle

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