La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFETs and Ni germano-silicide

C. H. Huang, C. Y. Lin, H. Y. Li, W. J. Chen, Albert Chin, P. Mei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have used SlojGei.7 to improve the hole mobility of La 2 O 3 p-MOSFETs. A hole mobility of 55 cm 2 /V-s in nitrided La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFET is measured and 1,8 times higher than the 31 cm 2 /V-s mobility in nitrided La 2 O 3 /Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Ω/Π and small junction leakage currents of 3×10 -8 A/cm 2 and 2×10 -7 A/cm 2 for respective P + N and N + P junctions.

Original languageEnglish
Title of host publicationVLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages52-55
Number of pages4
ISBN (Electronic)0780377656
DOIs
StatePublished - 1 Jan 2003
Event20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003 - Hsinchu, Taiwan
Duration: 6 Oct 20038 Oct 2003

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2003-January
ISSN (Print)1930-8868

Conference

Conference20th International Symposium on VLSI Technology, Systems and Applications, VLSI 2003
CountryTaiwan
CityHsinchu
Period6/10/038/10/03

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  • Cite this

    Huang, C. H., Lin, C. Y., Li, H. Y., Chen, W. J., Chin, A., & Mei, P. (2003). La 2 O 3 /Si 0.3 Ge 0.7 p-MOSFETs and Ni germano-silicide. In VLSI 2003 - 2003 20th International Symposium on VLSI Technology, Systems and Applications, Proceedings (pp. 52-55). [1252550] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VTSA.2003.1252550