La-based oxides for high-k gate dielectric application

Parhat Ahmet*, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Thermal stability of Rare earth oxides La2O3/Y 2O3 stack structure was studied. X-ray photoelectron spectroscopy (XPS) analysis revealed that Y2O3 layer suppresses the formation of SiO2 at interface. It was found that mobility degradation in La-based gate dielectric MOSFETs during high temperature annealing can be prevented by inserting a thin Y2O3 interfacial layer.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages408-411
Number of pages4
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 23 Oct 200626 Oct 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period23/10/0626/10/06

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