Kinetic competition model and size-dependent phase selection in 1-D nanostructures

Yu Chen, Yung Chen Lin, Chun Wei Huang, Chun Wen Wang, Lih Juann Chen, Wen-Wei Wu, Yu Huang*

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations


The first phase selection and the phase formation sequence between metal and silicon (Si) couples are indispensably significant to microelectronics. With increasing scaling of device dimension to nano regime, established thermodynamic and kinetic models in bulk and thin film fail to apply in 1-D nanostructures. Herein, we present an unique size-dependent first phase formation sequence in 1-D nanostructures, with Ni-Si as the model system. Interfacial-limited phase which forms the last in thin film, NiSi 2, appears as the dominant first phase at 300-800 °C due to the elimination of continuous grain boundaries in 1-D silicides. On the other hand, θ-Ni 2Si, the most competitive diffusion-limited phase takes over NiSi 2 and wins out as the first phase in small diameter nanowires at 800 °C. Kinetic parameters extracted from in situ transmission electron microscope studies and a modified kinetic growth competition model quantitatively explain this observation. An estimated critical diameter from the model agrees reasonably well with observations.

Original languageEnglish
Pages (from-to)3115-3120
Number of pages6
JournalNano Letters
Issue number6
StatePublished - 13 Jun 2012


  • Size dependent
  • diffusion
  • kinetic competition
  • phase sequence
  • silicide
  • silicon nanowire

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    Chen, Y., Lin, Y. C., Huang, C. W., Wang, C. W., Chen, L. J., Wu, W-W., & Huang, Y. (2012). Kinetic competition model and size-dependent phase selection in 1-D nanostructures. Nano Letters, 12(6), 3115-3120.