Ka-band pHEMT quadrupler with injection and extraction from oscillator frequency doubling points

Wei Ling Chang, Chin-Chun Meng, Jin Siang Syu, Yan Feng Wu, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Ka-band injection-locked quadrupler MMIC is demonstrated using 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) technology. pHEMT technology is suitable to the millimeter wave quadrupler by using the topology of high-order sub-harmonic injection lock based on a cross-coupled oscillator. Furthermore, thanks to the semi-insulating GaAs substrate, it is easy to implement microwave/millimeter wave passive components to achieve accurate balanced signals. As a result, the measured output power of the quadrupler is 8 dBm for frequency of 30 GHz and the locking bandwidth reaches 300 MHz.

Original languageEnglish
Title of host publication2014 IEEE MTT-S International Microwave Symposium, IMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479938698
DOIs
StatePublished - 1 Jan 2014
Event2014 IEEE MTT-S International Microwave Symposium, IMS 2014 - Tampa, FL, United States
Duration: 1 Jun 20146 Jun 2014

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2014 IEEE MTT-S International Microwave Symposium, IMS 2014
CountryUnited States
CityTampa, FL
Period1/06/146/06/14

Keywords

  • GaAs
  • high-electron mobility transistors (HEMTs)
  • injection-locked
  • Marchand balun
  • Sub-harmonic
  • voltage controlled oscillator

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