K-Band Low-Noise Amplifiers Using 0.18 μm CMOS Technology

Kyung Wan Yu*, Yin Lung Lu, Da Chiang Chang, Victor Liang, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

88 Scopus citations

Abstract

Two K-Band low-noise amplifiers (LNAs) are designed and implemented in a standard 0.18 μm CMOS technology. The 24 GHz LNA has demonstrated a 12.86 dB gain and a 5.6 dB noise figure (NF) at 23.5 GHz. The 26 GHz LNA achieves an 8.9 dB gain at the peak gain frequency of 25.7 GHz and a 6.93 dB NF at 25 GHz. The input referred third-order intercept point (IIP3) is > +2 dBm for both LNAs with a current consumption of 30 m A from a 1.8 V power supply. To our knowledge, the LNAs show the highest operation frequencies ever reported for LNAs in a standard CMOS process.

Original languageEnglish
Pages (from-to)106-108
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume14
Issue number3
DOIs
StatePublished - 1 Mar 2004

Keywords

  • 0.18 μm
  • CMOS
  • K-band
  • Low-noise amplifier (LNA)

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