JVD silicon nitride as tunnel dielectric in p-channel flash memory

Min She*, Tsu Jae King, Chen-Ming Hu, Wenjuan Zhu, Zhijiong Luo, Jin Ping Han, Tso Ping Ma

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO2 tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.

Original languageEnglish
Pages (from-to)91-93
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - 1 Feb 2002


  • Charge injection
  • Semiconductor memories
  • Silicon nitride

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