IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

W. J. Ho; N. L. Wang; Mau-Chung Chang; A. Sailer; J. A. Higgins

doi:10.1109/16.163515

IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

W. J. Ho, N. L. Wang, Mau-Chung Chang, A. Sailer, J. A. Higgins

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Original language	English
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/16.163515
State	Published - 1 Jan 1992

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10.1109/16.163515

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Cite this

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title = "IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz",

author = "Ho, {W. J.} and Wang, {N. L.} and Mau-Chung Chang and A. Sailer and Higgins, {J. A.}",

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AU - Wang, N. L.

AU - Chang, Mau-Chung

AU - Sailer, A.

AU - Higgins, J. A.

PY - 1992/1/1

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JO - Ieee Transactions On Electron Devices

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SN - 0018-9383

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