Original language | English |
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Number of pages | 1 |
Journal | IEEE Transactions on Electron Devices |
Volume | 39 |
Issue number | 11 |
DOIs | |
State | Published - 1 Jan 1992 |
IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz
W. J. Ho, N. L. Wang, Mau-Chung Chang, A. Sailer, J. A. Higgins
Research output: Contribution to journal › Article › peer-review