IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

W. J. Ho, N. L. Wang, Mau-Chung Chang, A. Sailer, J. A. Higgins

Research output: Contribution to journalArticlepeer-review

2 Scopus citations
Original languageEnglish
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 1 Jan 1992

Cite this