IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

W. J. Ho; N. L. Wang; Mau-Chung Chang; A. Sailer; J. A. Higgins

doi:10.1109/16.163515

IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

W. J. Ho, N. L. Wang, Mau-Chung Chang, A. Sailer, J. A. Higgins

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Original language	English
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/16.163515
State	Published - 1 Jan 1992

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10.1109/16.163515

Cite this

@article{e09a3e4738c2494185755141522e6998,

title = "IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz",

author = "Ho, {W. J.} and Wang, {N. L.} and Mau-Chung Chang and A. Sailer and Higgins, {J. A.}",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/16.163515",

language = "English",

volume = "39",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "11",

}

TY - JOUR

T1 - IVA-1 Self-Aligned, Emitter-Edge-Passivated AlGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz

AU - Ho, W. J.

AU - Wang, N. L.

AU - Chang, Mau-Chung

AU - Sailer, A.

AU - Higgins, J. A.

PY - 1992/1/1

Y1 - 1992/1/1

UR - http://www.scopus.com/inward/record.url?scp=0026954097&partnerID=8YFLogxK

U2 - 10.1109/16.163515

DO - 10.1109/16.163515

M3 - Article

AN - SCOPUS:0026954097

VL - 39

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 11

ER -