Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

C. K. Shu*, J. Ou, H. C. Lin, Wei-Kuo Chen, M. C. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

79 Scopus citations

Abstract

The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property.

Original languageEnglish
Pages (from-to)641-643
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number5
DOIs
StatePublished - 1 Dec 1998

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