Irregular increase in sheet resistance of Ni silicides at transition temperature range from NISI to NISI2 depending on annealing time

Ruifei Xiang*, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Kazuo Tsusui, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

NiSi is a promising material on salicide process. However, the thermal stability of NiSi is still a significant problem. Degradation in sheet resistance of Ni silicide is originated from phase transition from NiSi to NiSi 2 and/or agglomeration of the silicide layers. We noticed the phenomenon that the sheet resistance increased irregularly at the temperature region for the phase transition, that is, the peak characteristics appeared in the transformation curve of sheet resistance. In this work, condition of generating the high resistance state was revealed by changing temperature, ramping rate and duration time in the silicidation process.

Original languageEnglish
Title of host publicationProceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Pages253-257
Number of pages5
StatePublished - 2006
Event5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China
Duration: 21 Mar 200623 Mar 2006

Publication series

NameProceedings - Electrochemical Society
VolumePV 2006-03

Conference

Conference5th International Conference on Semiconductor Technology, ISTC 2006
CountryChina
CityShanghai
Period21/03/0623/03/06

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