Irregular increase in sheet resistance of Ni silicides at temperature range of transition from NiSi to NiSi2

Kazuo Tsutsui*, Xiang Ruifei, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

NiSi is a promising material on salicide process. However, the thermal stability of NiSi is still a significant problem. Degradation in sheet resistance of Ni suicide is originated from phase transition from NiSi to NiSi2 and/or agglomeration of the suicide layers. We noticed the phenomenon that the sheet resistance increased irregularly at the temperature region for the phase transition, that is, the peak characteristics appeared in the transformation curve of sheet resistance. In this work, condition of generating the high resistance state was revealed by changing temperature, ramping rate and duration time in the silicidation process.

Original languageEnglish
Title of host publicationExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06
Pages188-191
Number of pages4
StatePublished - 2006
EventExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 - Shanghai, China
Duration: 15 May 200616 May 2006

Publication series

NameExtended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Conference

ConferenceExtended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06
CountryChina
CityShanghai
Period15/05/0616/05/06

Fingerprint Dive into the research topics of 'Irregular increase in sheet resistance of Ni silicides at temperature range of transition from NiSi to NiSi<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this

    Tsutsui, K., Ruifei, X., Nagahiro, K., Shiozawa, T., Ahmet, P., Okuno, Y., Matsumoto, M., Kubota, M., Kakushima, K., & Iwai, H. (2006). Irregular increase in sheet resistance of Ni silicides at temperature range of transition from NiSi to NiSi2. In Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06 (pp. 188-191). [1669476] (Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06).