Ion induced adhesion via interfacial compounds

J. E.E. Baglin*, A. G. Schrott, R. D. Thompson, King-Ning Tu, A. Segmüller

*Corresponding author for this work

Research output: Contribution to journalArticle

62 Scopus citations

Abstract

Strong, stable adhesion of Cu thin films deposited on Al2O3 (sapphire) can be obtained by presputtering the substrate surface with 500 eV Ar+ ions before deposition of copper. The existence of a well-defined optimum fluence of sputtering ions suggests that the interface atomic configuration can be optimized to favor the formation of Cu-Al-O chemical bonding. The existence of a ternary bonding environment is inferred independently from a new dominant peak in the XPS spectrum from interface copper, whose occurrence is correlated with the optimized adhesion conditions.

Original languageEnglish
Pages (from-to)782-786
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume19-20
Issue numberPART 2
DOIs
StatePublished - 1 Jan 1987

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    Baglin, J. E. E., Schrott, A. G., Thompson, R. D., Tu, K-N., & Segmüller, A. (1987). Ion induced adhesion via interfacial compounds. Nuclear Inst. and Methods in Physics Research, B, 19-20(PART 2), 782-786. https://doi.org/10.1016/S0168-583X(87)80157-X