Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Xiang Lu; S. Sundar Kumar Iyer; Chen-Ming Hu; Nathan W. Cheung; Jing Min; Zhineng Fan; Paul K. Chu

doi:10.1063/1.120127

Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Xiang Lu^*, S. Sundar Kumar Iyer, Chen-Ming Hu, Nathan W. Cheung, Jing Min, Zhineng Fan, Paul K. Chu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We report the implementation of ion-cut silicon-on-insulator (SOI) water fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated.

Original language	English
Pages (from-to)	2767-2769
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	19
DOIs	https://doi.org/10.1063/1.120127
State	Published - 10 Nov 1997

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title = "Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation",

abstract = "We report the implementation of ion-cut silicon-on-insulator (SOI) water fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated.",

author = "Xiang Lu and Iyer, {S. Sundar Kumar} and Chen-Ming Hu and Cheung, {Nathan W.} and Jing Min and Zhineng Fan and Chu, {Paul K.}",

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AU - Lu, Xiang

AU - Iyer, S. Sundar Kumar

AU - Hu, Chen-Ming

AU - Cheung, Nathan W.

AU - Min, Jing

AU - Fan, Zhineng

AU - Chu, Paul K.

PY - 1997/11/10

Y1 - 1997/11/10

N2 - We report the implementation of ion-cut silicon-on-insulator (SOI) water fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated.

AB - We report the implementation of ion-cut silicon-on-insulator (SOI) water fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated.

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EP - 2769

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -

Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Abstract

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