Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation

Xiang Lu*, S. Sundar Kumar Iyer, Chen-Ming Hu, Nathan W. Cheung, Jing Min, Zhineng Fan, Paul K. Chu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations


We report the implementation of ion-cut silicon-on-insulator (SOI) water fabrication technique with plasma immersion ion implantation (PIII). The hydrogen implantation rate, which is independent of the wafer size, is considerably higher than that of conventional implantation. The simple PIII reactor setup and its compatibility with cluster-tools offer other ion-cut process optimization opportunities. The feasibility of the PIII ion-cut process is demonstrated by successful fabrication of SOI structures. The hydrogen plasma can be optimized so that only one ion species is dominant. The feasibility of performing ion-cut using helium PIII is also demonstrated.

Original languageEnglish
Pages (from-to)2767-2769
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - 10 Nov 1997

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