ION BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES.

I. Ohdomari*, King-Ning Tu, W. Hammer

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

In this study, four kinds of processing have been used to modify Pd//2Si-silicon interfaces by ion implantation. The electrical properties and reaction kinetics of the interfaces have been examined by current-voltage measurements and high energy ion backscattering spectroscopy. Preliminary results are reported and discussed.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalRadiation effects
Volume49
Issue number1-3
DOIs
StatePublished - 1 Jan 1978
EventProc of the Int Conf on Ion Beam Modif of Mater - Budapest, Hung
Duration: 4 Sep 19788 Sep 1978

Fingerprint Dive into the research topics of 'ION BEAM MODIFICATION OF SILICIDE-SILICON INTERFACES.'. Together they form a unique fingerprint.

  • Cite this