@inproceedings{ae218b3feb6047bb9dfd7b6f29d1462c,
title = "I/O device drain engineering for a 5V 0.6um CMOS technology",
abstract = "The ESD robustness of LATID (Large Angle Tilted Implanted Drain) MOSFET for I/O drivers is evaluated and found inadequate for deep submicron 5V CMOS technology. Alternative drain structures are examined and reported to meet the ESD and other criteria. An additional phosphorous implant that creates a LATID/DDD (Double Diffused Drain) structure meets all ESD and device criteria.",
author = "Y. Wei and Y. Loh and C. Wang and Chen-Ming Hu",
year = "1993",
month = jan,
day = "1",
doi = "10.1109/VTSA.1993.263616",
language = "English",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "6--10",
booktitle = "1993 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA 1993 - Proceedings of Technical Papers",
address = "United States",
note = "null ; Conference date: 12-05-1993 Through 14-05-1993",
}