InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors

Ram Narayan Chauhan, Nidhi Tiwari, Ya-Hsiang Tai, Po-Tsun Liu, Han Ping D. Shieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A thin film transistor with bi-stack layers of silicon incorporated InZnO (IZO:Si) on InZnO layer is proposed to enhance device performance and negative photo-biased stability. The resulting device realizes as enhancement mode (Vth ∼ 1.30 V) with mobility of 15.3 cm2/Vs, sub-threshold swing of 0.20 V/decade, better stab ility - 0.75V.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages142-143
Number of pages2
ISBN (Electronic)9781510845503
StatePublished - 1 Jan 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • InZnO
  • Sputtering
  • Thin film transistors

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    Chauhan, R. N., Tiwari, N., Tai, Y-H., Liu, P-T., & Shieh, H. P. D. (2015). InZnO capped with InZnO:Si bi-stack layers for enhanced photo-bias stability and performance in metal oxide thin film transistors. In 22nd International Display Workshops, IDW 2015 (pp. 142-143). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.