(INVITED) SILICIDE CONTACT FOR SHALLOW JUNCTION DEVICES.

King-Ning Tu*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed.

Original languageEnglish
Pages (from-to)147-151
Number of pages5
JournalJapanese Journal of Applied Physics
Volume22
DOIs
StatePublished - 1 Jan 1983

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