Investigations on highly stable thermal characteristics of a dilute In 0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor

Ke Hua Su*, Wei Chou Hsu, Ching Sung Lee, Po Jung Hu, Yue Han Wu, Li Chang, Ru Shang Hsiao, Jenn-Fang Chen, Tung Wei Chi

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

This work reports for the first time a novel In0.2Ga 0.8AsSb/GaAs heterostructure doped-channel field-effect transistor (DCFET) grown by the molecular beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the DCFET device has been effectively improved by introducing surfactant-like Sb atoms during the growth of the Si-doped InGaAs channel layer. The improved device characteristics include the peak extrinsic transconductance (gm, max) of 161.5 mS mm-1, the peak drain-source saturation current density (I DSS, max) of 230 mA mm-1, the gate-voltage swing (GVS) of 1.65 V, the cutoff frequency (fT) of 12.5 GHz and the maximum oscillation frequency (fmax) of 25 GHz at 300 K with the gate dimensions of 1.2 × 200 νm2. The proposed design has also shown a stable thermal threshold coefficient (∂Vth/∂T) of -0.7 mV K-1.

Original languageEnglish
Article number045012
JournalSemiconductor Science and Technology
Volume23
Issue number4
DOIs
StatePublished - 1 Apr 2008

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