Investigations of Cu bond structures and demonstration of a wafer-level 3D integration scheme with W TSVs

Kuan-Neng Chen, C. Cabral, S. H. Lee, P. S. Andry, J. Q. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Evaluations of two Cu bond structures, oxide-recessed and lock-n-key, are reported. In addition to excellent electrical characteristics of bonded via chain, alignment tests show lock-n-key bond structures have better performance than oxide-recessed ones. Finally a wafer-level three-dimensional (3D) integration scheme using lock-n-key Cu bond structure with W TSV is demonstrated.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages162-163
Number of pages2
DOIs
StatePublished - 20 Oct 2010
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
Duration: 26 Apr 201028 Apr 2010

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
CountryTaiwan
CityHsin Chu
Period26/04/1028/04/10

Keywords

  • 3D
  • Cu bonding
  • Oxide-recess and lock-n-key

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