Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications

C. Y. Chang*, J. G. Su, H. M. Hsu, S. C. Wong, T. Y. Huang, Y. C. Sun

*Corresponding author for this work

Research output: Contribution to conferencePaper

17 Scopus citations

Abstract

The RF properties of bulk dynamic threshold-voltage MOSFET (B-DTMOS) with a deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6V < Vgs=Vbs <0.85V) and over-drive (Vgs=Vbs > 0.85V) modes. While Ft can be improved to 65GHz at 12.5mA with 1.5V Vds bias under normal-mode DTMOS operation, a high Ft of 220GHz with good linearity and stability is achieved under over-drive mode of operation.

Original languageEnglish
Pages89-90
Number of pages2
StatePublished - 2001
Event2001 VLSI Technology Symposium - Kyoto, Japan
Duration: 12 Jun 200114 Jun 2001

Conference

Conference2001 VLSI Technology Symposium
CountryJapan
CityKyoto
Period12/06/0114/06/01

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    Chang, C. Y., Su, J. G., Hsu, H. M., Wong, S. C., Huang, T. Y., & Sun, Y. C. (2001). Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications. 89-90. Paper presented at 2001 VLSI Technology Symposium, Kyoto, Japan.