In this study, we investigate the merits of an independent double-gated configuration for nonvolatile memory operations. In contrast to the convention where the programming/erasing gate also acts as the read gate, a dedicated read gate with an oxide-only dielectric is proposed in the new mode. Using the same device under identical programming/erasing conditions, greatly improved programming speed (e.g., 61% increase under the stress condition of 18V for 10μs) is achieved, while the erasing speed, albeit initially retarded, shows enhancement when the erasing time is larger than a certain value, which can be explained by the back-gate bias effects. Retention characterization indicates that the new mode offers a larger memory window after 10 year extrapolation. In addition, a proper auxiliary gate bias applied during programming/erasing processes is found to improve the programming/erasing speed. Finally, by taking advantage of the separate-gated feature, two independent storage sites can be obtained by employing an oxide-nitride-oxide layer as the dielectric for both gates, thus realizing 2-bit/cell functionality.