Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structure

Yao Feng Chang, Ting Chang Chang, Chun-Yen Chang

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Abstract

We investigated multilevel resistance switching characteristics of the thin FeO(x) transition layer in a TiN/SiO(2)/FeO(x)/Fe structure by controlling the current compliance and stopped voltage during the set and reset processes, respectively. It is observed that the resistive state could be easily tunable by controlling external electric conditions. The multilevel memristive mechanism was characterized by distinguishing the electrical behaviors statistically, inferring that the reset process is associated with the mobile-ion-assisted electrochemical redox. Moreover, the set process is also modeled by power dissipation behaviors. The presented mathematical and physical model provides a possibility to elucidate a universal mechanism for bipolar multilevel memristor. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3630119]
Original languageEnglish
Article number053703
JournalJournal of Applied Physics
Volume110
Issue number5
DOIs
StatePublished - 1 Sep 2011

Keywords

  • RESISTIVE-SWITCHING MEMORY; UNIPOLAR; FILMS

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