Investigation on thin-film-transistors with a transparent material zinc-oxide layer with DC sputter deposition system

Yi Teh Chou*, Chen Shuo Huang, S. J. Shiau, Po-Tsun Liu, Li Wei Chu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have successfully developed a transparent thin film transistor (TTFT) with a novel material Zinc Oxide (ZnO) as semiconductor layer. The use of ZnO-based material can increases the field-effect mobility of TFT devices, the opening of AMLCD panel and releases the issue of photo-excited leakage current. In this work, the ZnO film was deposited in DC glow discharge plasma sputter system which is suitable for industrial technique and novel method in ZnO-base TFT process. With changing mixture gas flow, we can adjust the rate of Zn/ZnO mixture, Zn1+xO, and ZnO and get a suitable condition for TFT device. FTIR, XRD, SEM and AFM were utilized to analyze the characteristic of ZnO films.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages512-514
Number of pages3
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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