We have successfully developed a transparent thin film transistor (TTFT) with a novel material Zinc Oxide (ZnO) as semiconductor layer. The use of ZnO-based material can increases the field-effect mobility of TFT devices, the opening of AMLCD panel and releases the issue of photo-excited leakage current. In this work, the ZnO film was deposited in DC glow discharge plasma sputter system which is suitable for industrial technique and novel method in ZnO-base TFT process. With changing mixture gas flow, we can adjust the rate of Zn/ZnO mixture, Zn1+xO, and ZnO and get a suitable condition for TFT device. FTIR, XRD, SEM and AFM were utilized to analyze the characteristic of ZnO films.