Investigation on the parallel operation of All-GaN power module and thermal performance evaluation

Stone Cheng, Po Chien Chou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents a 270-V, 56-A GaN power module with three AlN substrates are prepared for the module. Each substrate is composed of three parallel connected GaN chips which incorporates six 2-A AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) cells. The devices are wire-bonded in parallel connection to increase the power rating. The packaged GaN HEMTs exhibit the pulsed drain current of 0.435 A/mm. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured for different connection and sizes of devices, at various power densities, pulse lengths, and duty factors. The static parameters of threshold voltage and leakage currents were extracted to show how these parameters would scale as the devices are paralleled. Performance of multiple chip GaN power module package and thermal evaluation is studied. Experimental results demonstrated the ability to parallel nine GaN HEMTs die together and to verify the current sharing during the dynamic switching to attain high-current capacities.

Original languageEnglish
Title of host publication2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
PublisherIEEE Computer Society
Pages3425-3431
Number of pages7
ISBN (Print)9781479927050
DOIs
StatePublished - 1 Jan 2014
Event7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan
Duration: 18 May 201421 May 2014

Publication series

Name2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Conference

Conference7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
CountryJapan
CityHiroshima
Period18/05/1421/05/14

Keywords

  • Cascode circuit
  • GaN HEMTs
  • Thermal Management

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