@inproceedings{be833d4f14294b4a82427bb216aeded3,
title = "Investigation on RF characteristics of stacked P-I-N polysilicon diodes for ESD protection design in 0.18-μm CMOS technology",
abstract = "An ESD protection design by using the stacked P-I-N polysilicon diodes for CMOS RF integrated circuits is proposed to reduce the input capacitance and to avoid the noise coupling from the common substrate. In this paper, the dc I-V characteristics, RF S-parameters, and ESD robustness of the stacked P-I-N polysilicon diodes are investigated in a 0.18-μm salicided CMOS process. This polysilicon diode with small parasitic capacitance and high ESD robustness is fully process compatible to general CMOS process without extra process modification.",
author = "Shiu, {Yu Da} and Chuang, {Che Hao} and Ming-Dou Ker",
year = "2006",
month = dec,
day = "1",
doi = "10.1109/VTSA.2006.251064",
language = "English",
isbn = "142440181X",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
pages = "56--57",
booktitle = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers",
note = "null ; Conference date: 24-04-2006 Through 26-04-2006",
}