Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides

Tun-Jen Chang, Chien Liu, Chia Chi Fan, Hsiao-Hsuan Hsu, Hsuan Han Chen, Wan-Hsin Chen, Yu Chi Fan, Tsung Ming Lee, Chien Liang Lin, Jun Mae, Zhi wei Zheng, Chun-Hu Cheng, Shih-An Wang, Chun-Yen Chang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this work, we successfully demonstrated the 9.6-nm-thick HfAlOx ferroelectric memory using light aluminium doping of 6.5% to form ferroelectric orthorhombic phase. Compared to ferroelectric HfZrOx film with zirconium diffusion issue, the HfAlOx film showed excellent thermal stability under high temperature annealing. Besides, the ferroelectric HfAlOx also exhibited robust polarization characteristics under endurance cycling test. A > 10(6) stressed cycles with 4 MV/cm can be measured and a long endurance was sustained over 5 x 10(7) cycles under 3.6 MV/cm. Therefore, the HfAlOx film showed the great promise for integrating in high performance ferroelectric memory with thermal budget concerns.
Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalVacuum
Volume166
DOIs
StatePublished - Aug 2019

Keywords

  • Ferroelectric; HfAlOx; Thermal stability; Endurance cycling; Domain pinning
  • HFALOX; ZRO2

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