Abstract
This study reports on the reduction of dislocations in the GaN grown on the stripe-patterned r-plane sapphire substrates via metal-organic chemical vapor deposition (MOCVD). The stripes oriented along the sapphire [1 1 2̄ 0] direction with asymmetrical side faces were fabricated by lithographic and wet-etching processes. The two etching sides of sapphire-striped mesa are {0 0 0 1} and {1 1̄ 0 1} faces. GaN grown on both etching facets exhibits different epitaxial relationships with the sapphire substrate. The GaN grown from the {0 0 0 1} side face of the sapphire mesa contains a low-dislocation density in the order of 107 cm-2. The interfacial regions between the GaN and patterned sapphire substrate are also studied to clarify the behavior of GaN epitaxial growth on the inclined sapphire faces and defect-reduction mechanism.
Original language | English |
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Pages (from-to) | 1627-1631 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 310 |
Issue number | 7-9 |
DOIs | |
State | Published - 1 Apr 2008 |
Keywords
- A1. Interface
- A1. Line defects
- A3. Metal-organic vapor-phase epitaxy
- B1. Nitrides
- B2. Semiconducting III-V materials