Investigation on microstructure in GaN epitaxial growth on the stripe-patterned r-plane sapphire substrates

Hou Guang Chen*, Tsung Shine Ko, Li Chang, Yue Han Wu, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

This study reports on the reduction of dislocations in the GaN grown on the stripe-patterned r-plane sapphire substrates via metal-organic chemical vapor deposition (MOCVD). The stripes oriented along the sapphire [1 1 2̄ 0] direction with asymmetrical side faces were fabricated by lithographic and wet-etching processes. The two etching sides of sapphire-striped mesa are {0 0 0 1} and {1 1̄ 0 1} faces. GaN grown on both etching facets exhibits different epitaxial relationships with the sapphire substrate. The GaN grown from the {0 0 0 1} side face of the sapphire mesa contains a low-dislocation density in the order of 107 cm-2. The interfacial regions between the GaN and patterned sapphire substrate are also studied to clarify the behavior of GaN epitaxial growth on the inclined sapphire faces and defect-reduction mechanism.

Original languageEnglish
Pages (from-to)1627-1631
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
StatePublished - 1 Apr 2008

Keywords

  • A1. Interface
  • A1. Line defects
  • A3. Metal-organic vapor-phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

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