Investigation on effects of composition on transparent aluminum zinc tin oxide thin-film transistors

Chur Shyang Fuh, Li Feng Teng, Yang Shun Fan, Chih Hsiang Chang, Po-Tsun Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigated on electrical performance of amorphous AI-Zn-Sn-O thin film transistor (AZTO TFT). The mobility enhanced while the concentration of Sn increased. The improved stability can be attributed to the increase of Sn concentration and enhancement of bonding energy of metal ion with the increase of O 2 gas flow rate.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages375-377
Number of pages3
StatePublished - 1 Dec 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period4/12/127/12/12

Keywords

  • AZTO
  • Transparent metal oxide semiconductor

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