Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Franky Lumbantoruan; Yuan Yee Wong; Yue Han Wu; Wei Ching Huang; Niraj Man Shrestra; Tung Tien Luong; Tran Binh Tinh; Edward Yi Chang

doi:10.1109/SMELEC.2014.6920785

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Franky Lumbantoruan^*, Yuan Yee Wong, Yue Han Wu, Wei Ching Huang, Niraj Man Shrestra, Tung Tien Luong, Tran Binh Tinh, Edward Yi Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved.

Original language	English
Title of host publication	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	20-23
Number of pages	4
ISBN (Electronic)	9781479957606
DOIs	https://doi.org/10.1109/SMELEC.2014.6920785
State	Published - 10 Oct 2014
Event	11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia Duration: 27 Aug 2014 → 29 Aug 2014

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference	11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
Country	Malaysia
City	Kuala Lumpur
Period	27/08/14 → 29/08/14

Keywords

AlN buffer layer
GaN on Si(111)
MOCVD
TMAl preflow

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Lumbantoruan, F., Wong, Y. Y., Wu, Y. H., Huang, W. C., Shrestra, N. M., Luong, T. T., Tinh, T. B., & Chang, E. Y. (2014). Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 20-23). [6920785] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920785

Lumbantoruan, Franky ; Wong, Yuan Yee ; Wu, Yue Han ; Huang, Wei Ching ; Shrestra, Niraj Man ; Luong, Tung Tien ; Tinh, Tran Binh ; Chang, Edward Yi. / Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 20-23 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

@inproceedings{989210c4da10445b8438039dff7378d7,

title = "Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD",

abstract = "The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved.",

keywords = "AlN buffer layer, GaN on Si(111), MOCVD, TMAl preflow",

author = "Franky Lumbantoruan and Wong, {Yuan Yee} and Wu, {Yue Han} and Huang, {Wei Ching} and Shrestra, {Niraj Man} and Luong, {Tung Tien} and Tinh, {Tran Binh} and Chang, {Edward Yi}",

year = "2014",

month = oct,

day = "10",

doi = "10.1109/SMELEC.2014.6920785",

language = "English",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "20--23",

booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

address = "United States",

note = "null ; Conference date: 27-08-2014 Through 29-08-2014",

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Lumbantoruan, F, Wong, YY, Wu, YH, Huang, WC, Shrestra, NM, Luong, TT, Tinh, TB & Chang, EY 2014, Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920785, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, Institute of Electrical and Electronics Engineers Inc., pp. 20-23, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, Malaysia, 27/08/14. https://doi.org/10.1109/SMELEC.2014.6920785

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD. / Lumbantoruan, Franky; Wong, Yuan Yee; Wu, Yue Han; Huang, Wei Ching; Shrestra, Niraj Man; Luong, Tung Tien; Tinh, Tran Binh; Chang, Edward Yi.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 20-23 6920785 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

AU - Lumbantoruan, Franky

AU - Wong, Yuan Yee

AU - Wu, Yue Han

AU - Huang, Wei Ching

AU - Shrestra, Niraj Man

AU - Luong, Tung Tien

AU - Tinh, Tran Binh

AU - Chang, Edward Yi

PY - 2014/10/10

Y1 - 2014/10/10

N2 - The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved.

AB - The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved.

KW - AlN buffer layer

KW - GaN on Si(111)

KW - MOCVD

KW - TMAl preflow

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DO - 10.1109/SMELEC.2014.6920785

M3 - Conference contribution

AN - SCOPUS:84908259865

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 20

EP - 23

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 27 August 2014 through 29 August 2014

ER -

Lumbantoruan F, Wong YY, Wu YH, Huang WC, Shrestra NM, Luong TT et al. Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 20-23. 6920785. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2014.6920785

Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

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