Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD

Franky Lumbantoruan*, Yuan Yee Wong, Yue Han Wu, Wei Ching Huang, Niraj Man Shrestra, Tung Tien Luong, Tran Binh Tinh, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially differences of the AlN buffer layer and GaN film properties in terms of surface morphology and crystal quality. It was found without TMAl preflow the crystal quality of AlN buffer layer and GaN deteriorated due to the formation of amorphous interlayer between Si and AlN. Meltback etching and cracks was observed on the surface of GaN grown on AlN without TMAl preflow. However, overlong duration of TMAl preflow degraded the properties of AlN buffer layer and the subsequent GaN layer. GaN grown with longer TMAl preflow suffer of poor crystal quality, high density cracks and rough surface morphology. With the optimum duration of TMAl preflow, crystal quality and surface roughness of GaN can be improved.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages20-23
Number of pages4
ISBN (Electronic)9781479957606
DOIs
StatePublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia
Duration: 27 Aug 201429 Aug 2014

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CountryMalaysia
CityKuala Lumpur
Period27/08/1429/08/14

Keywords

  • AlN buffer layer
  • GaN on Si(111)
  • MOCVD
  • TMAl preflow

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