Investigation of the thin silicon oxide deposited with different main gases and gap distances of atmospheric-pressure plasma jet at low temperature for OTFTs gate insulator

Kow-Ming Chang*, Shih Syuan Huang, Je Uai Lin, Chih Hsiang Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Low operation voltage organic thin film transistors (OTFTs) were successfully fabricated with top contact structure at low fabrication temperature. The thin gate dielectric of OTFTs were deposited by atmospheric pressure plasma jet at the substrate temperature about 150°C and under atmospheric pressure. The environment of processes would significantly improve the abilities of large area application for display and decrease the cost of instruments. We found that the quality of silicon oxide deposited with atmospheric pressure plasma jet strongly depended on the main gas and the gap distance between the plasma nozzle and the surface of the device and even influenced the deposition rate. Due to the improvement of gate insulator quality, good electrical characteristics of OTFTs can be obtained, such as carrier mobility as large as 0.66 cm2/ V·s, operation voltage as low as -2 V, and subthreshold swing as low as 0.7 V/dec.

Original languageEnglish
Title of host publicationLow Temperature Processing of Thin Films for Flexible Electronics
Pages1-8
Number of pages8
Edition9
DOIs
StatePublished - 1 Dec 2009
EventNovel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics - 215th ECS Meeting - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number9
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceNovel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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