Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate

Yu Lin Hsiao, Yi Jie Wang, Chia Ao Chang, You Chen Weng, Yen Yu Chen, Kai Wei Chen, Jer Shen Maa, Edward Yi Chang

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Abstract

A low-temperature (LT) AlGaN interlayer is inserted in the Al 0.1 Ga 0.9 N back barrier layer of an Al 0.2 Ga 0.8 N/GaN/Al 0.1 Ga 0.9 N double heterostructure grown on a 150mm Si substrate. It is found that the 21-nm-thick LT-AlGaN interlayer plays an important role in stress relaxation and dislocation reduction of the Al 0.1 Ga 0.9 N back barrier layer, especially for screw dislocation reduction. In addition, a buffer breakdown voltage higher than 600V is achieved, which is much higher than those of conventional heterostructures. These results demonstrate the effectiveness of combining the LTAlGaN interlayer and the Al0.2Ga 0.8 N/GaN/Al 0.1 Ga 0.9 N double heterostructure on a Si substrate to increase the breakdown voltage for high-power applications.

Original languageEnglish
Number of pages1
JournalApplied Physics Express
Volume7
Issue number11
DOIs
StatePublished - 1 Nov 2014

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