Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

Ta Shan Chang, Ting Chang Chang*, Po-Tsun Liu, Shu Wei Tsao, Feng Sheng Yeh

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 °C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work.

Original languageEnglish
Pages (from-to)374-377
Number of pages4
JournalThin Solid Films
Volume516
Issue number2-4
DOIs
StatePublished - 3 Dec 2007

Keywords

  • HSQ
  • Low-k
  • Passivation
  • TFT

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