Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

Kou Chen Liu*, Wen Hsien Tzeng, Kow-Ming Chang, Jiun Jie Huang, Yun Ju Lee, Ping Hung Yeh, Pang Shiu Chen, Heng Yuan Lee, Frederick Chen, Ming Jinn Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The pulsed laser deposition and growth of a high-k dielectric lanthanum aluminate LaAlO3 (LAO) thin film on indium tin oxide/glass substrate at different oxygen partial pressure was studied. Based on the pulsed laser deposition growth mechanism, we explain how a difference in the oxygen partial pressure influences the surface roughness, formation of an interfacial layer, and the transparent resistive switching characteristics of LAO thin films. The micro-structure and oxygen concentration difference inside LAO thin films may be the main reason for the difference in electrical and resistive switching properties. Films grown at higher oxygen partial pressure displayed more reliable resistive switching performance, due to the formation of the interfacial layer and a lower concentration of oxygen vacancies. The interfacial layer serves as a good oxygen reservoir and the involvement of more oxygen ions ensures the switching reliability. The migration of oxygen ions between the interfacial layer and the LAO film under applied bias may be the switching mechanism.

Original languageEnglish
Pages (from-to)1246-1250
Number of pages5
JournalThin Solid Films
Volume520
Issue number4
DOIs
StatePublished - 1 Dec 2011

Keywords

  • LaAlO3
  • Lanthanum aluminate
  • Oxygen partial pressure
  • Pulsed laser deposition
  • Resistive switching
  • Switching memory

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