Investigation of temperature-dependent high-frequency noise characteristics for deep-submicrometer bulk and SOI MOSFETs

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Bo Yuan Chen, Guo Wei Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on-insulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise (S id) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias g d0 as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance g m significantly decreases as temperature increases, their minimum noise figure NF min and equivalent noise resistance R n would degrade with increasing temperature.

Original languageEnglish
Article number6125244
Pages (from-to)551-556
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume59
Issue number3
DOIs
StatePublished - 1 Mar 2012

Keywords

  • High frequency
  • MOSFET
  • noise
  • temperature dependence
  • van der Ziel's model

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