This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (Ieff) approach that decouples the ST variation into transition-charge (Δ Q) and I eff variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.
- Line edge roughness (LER)
- Random dopant fluctuation (RDF)
- Switching time (ST)