Investigation of switching-time variations for nanoscale MOSFETs using the effective-drive-current approach

Yu Sheng Wu*, Ming Long Fan, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (Ieff) approach that decouples the ST variation into transition-charge (Δ Q) and I eff variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.

Original languageEnglish
Article number5357416
Pages (from-to)162-164
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number2
DOIs
StatePublished - 1 Feb 2010

Keywords

  • Line edge roughness (LER)
  • MOSFET
  • Random dopant fluctuation (RDF)
  • Switching time (ST)

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