Investigation of static noise margin of ultra-thin-body SOI SRAM cells in subthreshold region using analytical solution of poisson's equation

Pi-Ho Hu*, Yu Sheng Wu, Ming Long Fan, Pin Su, Ching-Te Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper investigates the Static Noise Margin (SNM) of Ultra-Thin-Body (UTB) SOI SRAM cells operating in subthreshold region using analytical solution of Poisson's equation validated with TCAD simulations. An analytical SNM model for UTB SOI SRAM cells operating in subthreshold region is presented. Our results indicate that back-gate bias (Vbg) can mitigate the Read SNM (RSNM) variability of UTB SOI SRAM cells in the subthreshold region, and the improvement of SNM variability is more significant than superthreshold region. Increasing cell β-ratio shows limited improvement on RSNM and has no benefit on SNM variability for subthreshold operation. The UTB SOI 8T SRAM cell exhibits RSNM 2X larger than the 6T SRAM cell in subthreshold region.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
PublisherIEEE
Pages115-116
Number of pages2
ISBN (Print)9781424427857
DOIs
StatePublished - 1 Dec 2009
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan
Duration: 27 Apr 200929 Apr 2009

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan
CityHsinchu
Period27/04/0929/04/09

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