Investigation of static noise margin of FinFET SRAM cells in sub-threshold region

Ming Long Fan*, Yu Sheng Wu, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


This paper investigates the Static Noise Margin (SNM) of FinFET SRAM cells operating in sub-threshold region using analytical solution of 3D Poisson's equation. An analytical SNM model for sub-threshold FinFET SRAM is demonstrated and validated by TCAD mixed-mode simulations. The stabilities of several novel independently controlled-gate FinFET SRAM cells are examined. Significant nominal RSNM improvements are observed in these novel cells. However, Write-ability is degraded and becomes an important concern for certain configurations in sub-threshold region. Our result indicates that R/W word-line (WL) voltage control technique is more effective than transistor sizing for improving the Write-ability of the FinFET sub-threshold SRAM. While 6T cell is not a viable candidate for sub-threshold SRAM and 8T/10T cells must be used in bulk CMOS, our analysis establishes the feasibility and viability of 6T FinFET cells for sub-threshold SRAM applications.

Original languageEnglish
Title of host publication2009 IEEE International SOI Conference
StatePublished - 28 Dec 2009
Event2009 IEEE International SOI Conference - Foster City, CA, United States
Duration: 5 Oct 20098 Oct 2009

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X


Conference2009 IEEE International SOI Conference
CountryUnited States
CityFoster City, CA

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