This work investigates the stability and AC performance of standard tied-gate 6T and several novel sub-threshold FinFET SRAM cells using independent-gate control technique. Significant nominal READ Static Noise Margin (RSNM) improvements are observed in these novel cells with the tolerable degradation of "cell" READ access time. However, Write-ability deteriorates and becomes a serious concern for certain configurations. Our results indicate that R/W WL (READ/WRITE Word-Line) voltage control technique is more effective than transistor sizing for improving sub-threshold cell stability. Between the mentioned cells in this work, the novel cell using double word-line structure shows the best stability with acceptable performance for the sub-threshold SRAM applications.