Investigation of stability and AC performance of sub-threshold FinFET SRAM

Ming Long Fan*, Yu Sheng Wu, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This work investigates the stability and AC performance of standard tied-gate 6T and several novel sub-threshold FinFET SRAM cells using independent-gate control technique. Significant nominal READ Static Noise Margin (RSNM) improvements are observed in these novel cells with the tolerable degradation of "cell" READ access time. However, Write-ability deteriorates and becomes a serious concern for certain configurations. Our results indicate that R/W WL (READ/WRITE Word-Line) voltage control technique is more effective than transistor sizing for improving sub-threshold cell stability. Between the mentioned cells in this work, the novel cell using double word-line structure shows the best stability with acceptable performance for the sub-threshold SRAM applications.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages66-67
Number of pages2
DOIs
StatePublished - 20 Oct 2010
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
Duration: 26 Apr 201028 Apr 2010

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
CountryTaiwan
CityHsin Chu
Period26/04/1028/04/10

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