Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application

Jun Chen*, Teng Chieh Ku, Ming Fu Li, Albert Chin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for sourceldrain (SID) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAI03 (LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5x10-3 A/cm2 for 500°C RTA treated samples at Vfb-IV were achieved.

Original languageEnglish
Title of host publicationIWJT 2012 - 2012 12th International Workshop on Junction Technology
EditorsYu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781467312578
DOIs
StatePublished - 1 Jan 2012
Event12th International Workshop on Junction Technology, IWJT 2012 - Shanghai, China
Duration: 14 May 201215 May 2012

Publication series

NameIWJT 2012 - 2012 12th International Workshop on Junction Technology
Volume2012-January

Conference

Conference12th International Workshop on Junction Technology, IWJT 2012
CountryChina
CityShanghai
Period14/05/1215/05/12

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  • Cite this

    Chen, J., Ku, T. C., Li, M. F., & Chin, A. (2012). Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application. In Y-L. Jiang, X-P. Qu, B-Z. Li, & G-P. Ru (Eds.), IWJT 2012 - 2012 12th International Workshop on Junction Technology (pp. 1-4). (IWJT 2012 - 2012 12th International Workshop on Junction Technology; Vol. 2012-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2012.6212826