@inproceedings{d98cc2939aa843d987204c1a4a65ec85,
title = "Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application",
abstract = "This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for sourceldrain (SID) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAI03 (LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5x10-3 A/cm2 for 500°C RTA treated samples at Vfb-IV were achieved.",
author = "Jun Chen and Ku, {Teng Chieh} and Li, {Ming Fu} and Albert Chin",
year = "2012",
month = jan,
day = "1",
doi = "10.1109/IWJT.2012.6212826",
language = "English",
series = "IWJT 2012 - 2012 12th International Workshop on Junction Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--4",
editor = "Yu-Long Jiang and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru",
booktitle = "IWJT 2012 - 2012 12th International Workshop on Junction Technology",
address = "United States",
note = "null ; Conference date: 14-05-2012 Through 15-05-2012",
}