Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application

Jun Chen; Teng Chieh Ku; Ming Fu Li; Albert Chin

doi:10.1109/IWJT.2012.6212826

Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application

Jun Chen^*, Teng Chieh Ku, Ming Fu Li, Albert Chin

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for sourceldrain (SID) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAI0₃ (LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5x10-³ A/cm² for 500°C RTA treated samples at Vfb-IV were achieved.

Original language	English
Title of host publication	IWJT 2012 - 2012 12th International Workshop on Junction Technology
Editors	Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781467312578
DOIs	https://doi.org/10.1109/IWJT.2012.6212826
State	Published - 1 Jan 2012
Event	12th International Workshop on Junction Technology, IWJT 2012 - Shanghai, China Duration: 14 May 2012 → 15 May 2012

Publication series

Name	IWJT 2012 - 2012 12th International Workshop on Junction Technology
Volume	2012-January

Conference

Conference	12th International Workshop on Junction Technology, IWJT 2012
Country	China
City	Shanghai
Period	14/05/12 → 15/05/12

Access to Document

10.1109/IWJT.2012.6212826

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application'. Together they form a unique fingerprint.

Cite this

Chen, J., Ku, T. C., Li, M. F., & Chin, A. (2012). Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application. In Y-L. Jiang, X-P. Qu, B-Z. Li, & G-P. Ru (Eds.), IWJT 2012 - 2012 12th International Workshop on Junction Technology (pp. 1-4). (IWJT 2012 - 2012 12th International Workshop on Junction Technology; Vol. 2012-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWJT.2012.6212826

Chen, Jun ; Ku, Teng Chieh ; Li, Ming Fu ; Chin, Albert. / Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application. IWJT 2012 - 2012 12th International Workshop on Junction Technology. editor / Yu-Long Jiang ; Xin-Ping Qu ; Bing-Zong Li ; Guo-Ping Ru. Institute of Electrical and Electronics Engineers Inc., 2012. pp. 1-4 (IWJT 2012 - 2012 12th International Workshop on Junction Technology).

@inproceedings{d98cc2939aa843d987204c1a4a65ec85,

title = "Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application",

abstract = "This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for sourceldrain (SID) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAI03 (LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5x10-3 A/cm2 for 500°C RTA treated samples at Vfb-IV were achieved.",

author = "Jun Chen and Ku, {Teng Chieh} and Li, {Ming Fu} and Albert Chin",

year = "2012",

month = jan,

day = "1",

doi = "10.1109/IWJT.2012.6212826",

language = "English",

series = "IWJT 2012 - 2012 12th International Workshop on Junction Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--4",

editor = "Yu-Long Jiang and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru",

booktitle = "IWJT 2012 - 2012 12th International Workshop on Junction Technology",

note = "null ; Conference date: 14-05-2012 Through 15-05-2012",

}

Chen, J, Ku, TC, Li, MF & Chin, A 2012, Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application. in Y-L Jiang, X-P Qu, B-Z Li & G-P Ru (eds), IWJT 2012 - 2012 12th International Workshop on Junction Technology. IWJT 2012 - 2012 12th International Workshop on Junction Technology, vol. 2012-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 12th International Workshop on Junction Technology, IWJT 2012, Shanghai, China, 14/05/12. https://doi.org/10.1109/IWJT.2012.6212826

Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application. / Chen, Jun; Ku, Teng Chieh; Li, Ming Fu; Chin, Albert.

IWJT 2012 - 2012 12th International Workshop on Junction Technology. ed. / Yu-Long Jiang; Xin-Ping Qu; Bing-Zong Li; Guo-Ping Ru. Institute of Electrical and Electronics Engineers Inc., 2012. p. 1-4 (IWJT 2012 - 2012 12th International Workshop on Junction Technology; Vol. 2012-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application

AU - Chen, Jun

AU - Ku, Teng Chieh

AU - Li, Ming Fu

AU - Chin, Albert

PY - 2012/1/1

Y1 - 2012/1/1

N2 - This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for sourceldrain (SID) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAI03 (LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5x10-3 A/cm2 for 500°C RTA treated samples at Vfb-IV were achieved.

AB - This paper explores two low temperature technological developments related to future n-MOSFETs using III-V semiconductors as channel materials. (1). It was found that Yb-GaAs Schottky contact with RTA at 500°C for 30s has good rectifying characteristics, low effective electron barrier height, low sheet resistivity, atomically sharp junction with GaAs. These properties are suitable for sourceldrain (SID) formation in GaAs n-MOSFETs. (2). GaAs MOS capacitors were fabricated by E-gun deposition of LaAI03 (LAO) dielectric and PVD deposition of TaN electrode. The capacitors with well-behaved CV characteristics with EOT=3nm, gate leakage currents 7.5x10-3 A/cm2 for 500°C RTA treated samples at Vfb-IV were achieved.

UR - http://www.scopus.com/inward/record.url?scp=85048597760&partnerID=8YFLogxK

U2 - 10.1109/IWJT.2012.6212826

DO - 10.1109/IWJT.2012.6212826

M3 - Conference contribution

AN - SCOPUS:85048597760

T3 - IWJT 2012 - 2012 12th International Workshop on Junction Technology

SP - 1

EP - 4

BT - IWJT 2012 - 2012 12th International Workshop on Junction Technology

A2 - Jiang, Yu-Long

A2 - Qu, Xin-Ping

A2 - Li, Bing-Zong

A2 - Ru, Guo-Ping

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 14 May 2012 through 15 May 2012

ER -

Chen J, Ku TC, Li MF, Chin A. Investigation of schottky junction and mos technology for 111-v compound semiconductor mosfet application. In Jiang Y-L, Qu X-P, Li B-Z, Ru G-P, editors, IWJT 2012 - 2012 12th International Workshop on Junction Technology. Institute of Electrical and Electronics Engineers Inc. 2012. p. 1-4. (IWJT 2012 - 2012 12th International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2012.6212826